Abstract
A gallium focused ion beam (Ga-FIB) has characteristics of sharpness and high current density, which enables both high spatial resolution SIMS analysis and precise micromachining of materials. In situ combination of micromachining and high spatial resolution analysis brings a new field of microbeam analysis on materials: three-dimensional analysis of microstructure under microscopic observation. By utilizing a Ga-FIB SIMS, analysis of bureid fine particles in a thin film multilayer device and observation of cross-section of an inorganic microcapsule were made.
