抄録
Since bonding process is often the last step of packaging processes for microelectro-mechanical (MEMS) devices, high temperature processing for bonding is not possible at that stage. In addition, MEMS devices are interfaced with real world systems and responded to incoming signals. MEMS devices to seal in vacuum seal in order to protect them from harsh environments. Furthermore, it is well known that the packaging cost is about 80% of the total fabrication cost for devices, which can be reduced by wafer-level packaging. So there is a long-time demand for low temperature wafer-level bonding techniques for MEMS packaging. In order to get rid of packaging issues, we have developed a room temperature wafer bonding technique called surface activated bonding process abbreviated as SAB. By definition, the SAB as a bonding process that joins two similar or dissimilar smooth surfaces cleaned by an Ar-fast atom beam (Ar-FAB), an Ar-ion beam or a rh plasma beam in high vacuum/ultra high vacuum at room temper rticle reports on bonding process and results of Si/Si, Si/Glass, and Glass/Glass wafers containing MEMS devices and micro-fluidic V-groups by Ar-FAB in high vacuum at room temperature.kn-abstract= Since bonding process is often the last step of packaging processes for microelectro-mechanical (MEMS) devices, high temperature processing for bonding is not possible at that stage.
