抄録
Using scanning tunneling microscopy observations, the ability of
group III metals, In, Al, Ga and Tl, to form identical-size magic
nanoclusters upon high-temperature adsorption on Si(100) has been
examined. Magic clustering has been detected in In/Si(100) and
Al/Si(100) systems. In both cases, atomic structure of the
nanocluster is plausibly described by the model of Bunk et al.
[Appl.Surf.Sci. 123/124, 104 (1998)], in which six
metal atoms and seven Si atoms form a stable pyramid-like
cluster. In the case of In/Si(100) system, the perfectly-ordered
4×3 superlattice built of magic nanoclusters can be
formed. The Al/Si(100) nanoclusters has been found to form local
arrays with a 4×5 periodicity. In Ga/Si(100) and
Tl/Si(100) systems, no indication of magic clustering has been
detected. The criteria for magic cluster formation are discussed.
