Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance—Voltage Measurements

抄録

We evaluated the fixed charge (Q_f) and the interface state density (D_it) from the capacitance—voltage (C—V) measurement before and after rapid thermal cycle annealing (RTCA) using p-type silicon in which the passivation was performed with aluminum oxide (Al₂O₃) film by atomic layer deposition (ALD). From C—V measurement we obtained the surface potential (V_S), accumulation and depletion width, and as a result, energy band diagrams were produced. It was determined that a barrier height of approximately 100 mV was induced by fixed negative charges in the Al₂O₃ layer near the interface to the p-type Si substrate. The field effect of the Al₂O₃ passivation layer created by RTCA strongly remains without depending on the gate voltage (V_G). [DOI: 10.1380/ejssnt.2012.22]