抄録
We firstly performed plan-view transmission electron microscope (TEM) observations along SiC [0001] direction to analyze the in-plane structure of graphene on Si- and C-faces of SiC. A fast Fourier transformation (FFT) of the TEM images and the reconstructed inverse FFT (iFFT) images enabled to investigate the stacking structure. The FFT patterns of several graphene layers on Si- and C-faces show one and multiple sets of six-fold 1100 spots, respectively. These mean that within a same grain graphene layers on the Si-face stack without rotation, while graphene layers on the C-face stack with rotation. [DOI: 10.1380/ejssnt.2012.396]
