抄録
We investigated the influence of an external magnetic field for the carrier injection process of a metal (Au)/insulator (Cr2O3/FeCr/CeO2)/semiconductor (Si) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the CeO2 layer from Si were injected into the FeCr or an oxygen deficiency layer formed around the FeCr layer. When a magnetic field was applied, the hysteresis window width of this capacitor was increased. I-V curve analyses under a magnetic field revealed that this increases was more likely due to the magnetic state of the FeCr layer. [DOI: 10.1380/ejssnt.2013.122]
