Abstract
To investigate electric-field-induced superconductivity in covalent semiconductors, band structures and induced-hole carrier density of hydrogenated Si(110) surface in an external electric field were calculated by using first principles full-potential linearized augmented plane-wave method. Results predict that the induced-hole carriers, which form a Fermi surface with a hole pocket centered at Γ point, are less than the critical density of superconductivity for boron-doped Si. Thus, electric-field-induced superconductivity at Si(110) surface may be difficult to achieve, which is in contrast to the case of diamond(110) surface. [DOI: 10.1380/ejssnt.2014.109]
