抄録
Basic photoluminescence (PL), scintillation and thermoluminescence (TL) properties of Cu-doped ZnO thin films deposited by the Liquid Phase Epitaxy (LPE) method are reported. When the films were excited with 280 nm LED,the emission band was detected at 510 nm wavelength. This emission originated from the recombination between neutral shallow donor levels related to oxygen vacancy and the t2 energy level of excited Cu2+ (d9) accepter. The PL quantum efficiency was estimated to be about 3%. The pulse height spectra recorded under 241 Am alpha-ray irradiation indicated that the Cu-doped film had scintillation light yield greater than that of Bi4Ge3O12 (BGO) commercial scintillator. [DOI: 10.1380/ejssnt.2014.275]
