抄録
We propose an experimental methodology for producing silicon carbide (SiC) films on Si substrates using an ion beam induced chemical vapor deposition (IBICVD) technique with methylsilane (SiH3CH3) as a gas source. Both methylsilane gas (1.2 sccm) and Ar ion beam (100 eV, 5μA) were simultaneously introduced onto Si(100) substrates. Temperatures of Si substrates were set at 600, 700, or 800°C. A SiC thin film was formed by the simultaneous introduction of methylsilane and Ar ions onto the Si substrate when the substrate temperature was 600°C. On the other hand, in the cases of 700 and 800°C, SiC films were formed by methylsilane gas alone and SiC film deposition rates by methylsilane gas with the Ar ion beam were approximately identical with those obtained without the Ar ion beam. We therefore conclude that the IBICVD technique with methylsilane is useful for SiC film formation on Si at relatively low substrate temperatures. [DOI: 10.1380/ejssnt.2015.174]
