Observation of Point Contact Visible Luminescence from Ga-Doped ZnO Layers

Qing Yang; Xiaohong Zhang; Xiaohong Zhou; Hirokazu Tatsuoka; Hiroko Kominami; Kazuhiko Hara; Yoichiro Nakanishi

doi:10.1380/ejssnt.2015.201

Regular Papers

Observation of Point Contact Visible Luminescence from Ga-Doped ZnO Layers

Qing Yang, Xiaohong Zhang, Xiaohong Zhou, Hirokazu Tatsuoka, Hiroko Kominami, Kazuhiko Hara, Yoichiro Nakanishi

著者情報

キーワード: Zinc oxide, Ga doping, Oxidation, Electroluminescence, Point contact, Visible emission

ジャーナルフリー

2015 年 13 巻 p. 201-203

DOI https://doi.org/10.1380/ejssnt.2015.201

詳細

抄録

We report the point contact visible luminescence from Ga-doped ZnO layers. The Ga-doped ZnO layers were grown by the thermal oxidation of ZnS substrates with gallium in the air. The injected light emission was observed around the point-contact surface of ZnO layers when a forward DC voltage in the range of 2.5-9.8 V was applied (point contact was positive). Typically, we illustrated the luminescent spectrum for 6.7 V which showed a wide emission band centering at 680 nm. [DOI: 10.1380/ejssnt.2015.201]

責任著者(Corresponding author)

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