Mapping Accumulated Charges at the Semiconductor/Insulator Interface of Organic Field-Effect Transistors by Sum-Frequency Generation Spectroscopy

抄録

Charges accumulated at the semiconductor/insulator interface of a top-contact bottom-gate organic field-effect transistors (OFET) with a channel length/width of 1000 μm/1000 μm while applying a negative gate voltage are visualized in a probe region of 4 mm × 4 mm by electric-field induced sum-frequency generation spectroscopy. It is found the charges are accumulated not only inside but also outside the channel of the OFET. The accumulated charges are also found to be uniformly distributed on the semiconductor/insulator interface. The resolution of this mapping technique is explored to be 0.34 mm in the horizontal direction and 0.32 mm in the vertical. [DOI: 10.1380/ejssnt.2018.364]