抄録
PEEM (photoemission electron microscopy), AES (Auger electron spectroscopy) and SXES (soft X-ray emission spectroscopy) studies have been carried out on Cu(thin film)/3C-SiC(substrate) contact systems. The PEEM studies have clarified both lateral diffusion and microstructure formation on the Cu/3C-SiC specimen surfaces due to heat treatment. The AES has shown accumulation of carbon atoms on top of the specimen surface at high temperature annealing. The SXES studies have elucidated a silicide, i.e., Cu3Si, formation for the heat treated Cu(film)/3C-SiC specimen. A structural model is proposed for the heat treated Cu(30 nm)/3C-SiC(substrate) specimen. [DOI: 10.1380/ejssnt.2004.230]
