Sub-nm depth resolution in sputter depth profiling by low energy ion bombardment

抄録

The sputter damage profile of a Si(100) by low energy O₂⁺ and Ar⁺ ion bombardment with various incident angles was measured by using medium energy ion scattering spectroscopy. It was observed that the damaged Si surface layer could be minimized down to 0.5∼0.6 nm with grazing incident angle of 80° for 500 eV Ar⁺ and O₂⁺ ion bombardment. The SIMS depth resolution for a GaAs delta layer in Si and a multiple boron nitride delta layer in Si with low O₂⁺ ion bombardment was sub-nm, which is in a good agreement with the measured damaged layer thickness. [DOI: 10.1380/ejssnt.2004.24]