抄録
Processes of β-FeSi2 nanosize islands growth on Si(111)7× 7 surface and Si(111)-Cr surface phases and silicon growth over β-FeSi2 nanosize islands have been studied by LEED, in situ electrical measurements and ex situ atomic force microscopy. The close matching of electric parameters of silicon with buried iron disilicide clusters and Si(111)7× 7-Cr surface phases proves minimal carrier scattering on these clusters. Thermoelectric measurements of buried β-FeSi2 islands revealed a very high value of the thermoelectric power coefficient as compared with p-type clean silicon. [DOI: 10.1380/ejssnt.2005.97]
