Formation of ordered Ga-droplets by using atomic-hydrogen assisted Ga self-gathering effect on nano-oxide patterned GaAs (111)A surface

抄録

We demonstrate a novel way for the fabrication of the site-controlled Ga-droplets on GaAs(111)A surface based on oxide patterning process. The process is combined with the atomic force microscope tip-induced local area nano-oxidation and atomic hydrogen assisted oxide decomposition (AHAOD). The formation mechanism of Ga-droplets can be explained by the self-gathering effect of the Ga on the modified GaAs(111)A. Furthermore, we suggest the possibility of fabrication of ordered GaAs nanostructures by subsequent supplying of As flux on the site-controlled Ga-droplets. [DOI: 10.1380/ejssnt.2006.161]