Epitaxial growth of ZnO crystal on the Si-terminated 6H-SiC(0001) surface using the first-principles calculation

Katsutoshi Fujiwara; Akira Ishii; Tomoki Abe; Koshi Ando

doi:10.1380/ejssnt.2006.254

Conference -ISSS-4-

Epitaxial growth of ZnO crystal on the Si-terminated 6H-SiC(0001) surface using the first-principles calculation

Katsutoshi Fujiwara, Akira Ishii, Tomoki Abe, Koshi Ando

著者情報

キーワード: ZnO, 6H-SiC(0001), migration barrier energy, polarity, first-principles calculation

ジャーナルフリー

2006 年 4 巻 p. 254-257

DOI https://doi.org/10.1380/ejssnt.2006.254

詳細

抄録

The dynamics of the zinc and the oxygen adatom supplied as atomic zinc and atomic oxygen on the 6H-SiC(0001) surface is investigated using the first-principles calculation. The result reveals that the on top site is unstable for the zinc and the oxygen on the 6H-SiC(0001) surface. However, the oxygen is stable at the on top site near a Zn adatom. Our calculation shows that the optimized growth condition for the growth of ZnO on 6H-SiC(0001) is Zn-polarity ZnO crystal grown under the stoichiometric growth condition. [DOI: 10.1380/ejssnt.2006.254]

責任著者(Corresponding author)

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