e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -JRSSS7-
Fe interaction with native SiO2 on Si(001) studied by RHEED
V. V. KorobtsovV. V. BalashevT. A. PisarenkoE. A. ChusovitinE. V. Markidonov
著者情報
ジャーナル フリー

2007 年 5 巻 p. 45-50

詳細
抄録
Kinetics of structure and phase constitution of Fe/SiO2/Si(001) system under different conditions of deposition and annealing was considered. It was established that SiO2 layer is not destroyed during Fe deposition process over the temperature range from 20 to 650°C. As a result, the Fe films having different morphologies are formed on the oxide surface. Destruction of SiO2 layer occurs upon annealing on defect places of SiO2 film that results in the interaction of Fe atoms with the Si substrate and successive silicides formation. [DOI: 10.1380/ejssnt.2007.45]
著者関連情報

この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
前の記事 次の記事
feedback
Top