Investigation of Preparation Conditions and Microstructure of Mn-N Films by Reactive Sputtering

抄録

The crystal structure of manganese nitride material depends on the chemical composition. In this paper, we report the crystal structure of manganese nitride which depends on the deposition condition of a flow ratio of argon and nitrogen, F_N{=N₂/(Ar+N₂)}. The samples were fabricated by an RF-sputtering method. Argon and nitrogen were used as a reactive sputtering gas. The crystal structure of the obtained films was analyzed by X-ray diffraction (XRD) measurements. The stoichiometry of the film under F_N=5-100 % was evaluated as Mn₃N₂. The lattice spacing d of (101) expands as the nitrogen flow ratio increases. In the case of F_N=1 %, the composition was evaluated as Mn₄N. [DOI: 10.1380/ejssnt.2008.115]