抄録
The crystal structure of manganese nitride material depends on the chemical composition. In this paper, we report the crystal structure of manganese nitride which depends on the deposition condition of a flow ratio of argon and nitrogen, FN{=N2/(Ar+N2)}. The samples were fabricated by an RF-sputtering method. Argon and nitrogen were used as a reactive sputtering gas. The crystal structure of the obtained films was analyzed by X-ray diffraction (XRD) measurements. The stoichiometry of the film under FN=5-100 % was evaluated as Mn3N2. The lattice spacing d of (101) expands as the nitrogen flow ratio increases. In the case of FN=1 %, the composition was evaluated as Mn4N. [DOI: 10.1380/ejssnt.2008.115]
