論文ID: 2023-028
Annealing temperature dependence on optical and scintillation properties of the β-gallium oxide (β-Ga2O3) translucent ceramic has been investigated. The Ga2O3 translucent ceramic was prepared by spark plasma sintering and annealed in air. All the ceramics showed the broad emissions peaking at 390—410 nm due to the recombination of defect-related donors and acceptors. The ceramics annealed at 1000—1100°C showed ultraviolet emission at around 350 nm due to increase in transmittance which was caused by decrease in oxygen vacancies. Under α-ray excitation from 241Am, the scintillation light yield of the ceramic annealed at 1000°C was the highest among all the ceramics, and the value was 2300 photons/5.5 MeV-α.
