論文ID: 2025-040
In this study, ion irradiation induced microstructural development of polycrystalline double-thick-walled (DTW) silicon carbide (SiC) nanotubes are investigated. In-situ transmission electron microscopy (TEM) observations of two kinds of polycrystalline DTW SiC nanotubes with a wide and narrow spacing between the outer and inner nanotubes are carried out under the ion irradiation with 200-keV Si+ ions at room temperature. The critical doses of amorphization for both DTW SiC nanotubes are larger than those of SiC bulk materials in the previous studies. Amorphous DTW SiC nanotubes are successfully synthesized for the first time via the ion irradiation of both polycrystalline DTW SiC nanotubes. From in-situ TEM observation results, all of outer, inner diameters and length of both inner and outer nanotubes increase with increasing the irradiation dose till around complete amorphization of SiC crystals, and then decrease. After ion irradiation of more than 20 displacement per atom, polycrystalline DTW SiC nanotubes with a wide and narrow spacing between the outer and inner nanotubes are transformed to amorphous SiC nanotube and SiC nanowire, respectively.
