報文
高周波マグネト口ンスパッタリング法によるLaFeO3ぺ口ブスカイト薄膜の作製とその電気伝導性
2001 年 69 巻 3 号 p. 171-176
詳細
2001 年 69 巻 3 号 p. 171-176
La-Fe complex oxide films were prepared on Si(111), MgO(100) and SiO2 glass substrates by radio frequency magnetron sputtering using a LaFeO3 target. All the films prepared by this method have the La/Fe atomic ratio of about 1.0. The films were amorphous when the substrate temperature was lower than 650°C, while orthorhombic LaFeO3−δ perovskite films were formed at the substrate temperature higher than 700°C in Ar atmosphere. The orthorhombic LaFeO3−δ perovskite films were also obtained on Si(lll), MgO(100) and SiO2 glass substrates by reactive sputtering in O2/Ar = 0.2∼1.0 at the substrate temperature higher than 700°C. However, in the case of MgO(100) substrate, the orthorhombic LaFeO3−δ perovskite film with (101) orientation was formed. The orthorhombic LaFeO3 perovskite films were formed by heat-treatment of the amorphous La-Fe complex oxide and the crystalline LaFeO3−δ perovskite films in air or Ch atmosphere. The electrical conductivities of LaFeO3−δ/MgO(100) and LaFeO3−δ/SiO2 perovskite films were measured in the range from room temperature to 600°C. It was found that both LaFeO3−δ/MgO(100) and LaFeO3−δ/SiO2 perovskite films are n-type semiconductors with hopping conduction in N2, air and O2.
