This study investigates the growth process and thermoelectric properties of electrodeposited Cu₂Se films. The growth mechanism revealed that morphology, stoichiometry, Seebeck coefficient (S), and electrical conductivity all vary with film thickness. Voltammetric results showed a consistent appearance and variation of the anodic peak, highlighting its role in defining the electrochemical window for the controlled co-deposition of Cu and Se, which is crucial for developing semiconductors. SEM analysis revealed that the film morphology strongly depends on deposition time. Microstructural analysis demonstrated a distinct evolution in the film growth mechanism, starting with an early-stage transition from layer-plus-island-like growth. EDX and XRD analyses indicated changes in atomic composition during growth, beginning with a Se-rich mixture of Cu-Se phases. The electrical conductivity (σ) of the films increased as the layer thickness decreased. The Seebeck coefficient (S) increases with film thickness, reaching an optimal value of +16 µV/K at 10.5 µm.