Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
ISSN-L : 1344-3542
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Organic Field-effect Transistors Based on Alkylphenyl-substituted Dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophenes
Yoshihito KUNUGIYuki FUJITAMasanori TSUTSUIKazuo OKAMOTO
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2015 年 83 巻 7 号 p. 526-528

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We investigated the characteristics of organic thin-film transistors based on alkylphenyl-substituted dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophenes (21DNTT) called 4,4′-nP-21DNTT and 6,6′-nP-21DNTT. We found that field-effect characteristics were strongly influenced by the position of the alkyl substituent on the 21DNTT core. An optimal field-effect mobility of 0.46 cm2 V−1 s−1 was obtained for the 6,6′-8P-21DNTT-based transistor.

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© 2015 The Electrochemical Society of Japan
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