IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
Hideaki MatsuzakiHiroki SugiyamaHaruki YokoyamaTakashi KobayashiTakatomo Enoki
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2004 Volume 1 Issue 11 Pages 292-297

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Abstract

Pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors (HEMTs) were fabricated to investigate the short-channel effect in the sub-0.1-µm gate-length region. Employing a thin Schottky barrier and a thin channel layer structure enabled us to suppress the short-channel effect in short-gate HEMTs, and a high-performance 47-nm-gate HEMT with a 423-GHz current gain cutoff frequency was achieved. The present results show the possibility of the practical use of pseudomorphic HEMTs with a scaled-down structure for various applications, such as ultra-high-speed digital circuits and millimeter-wave communications/observations.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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