IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Raman induced wavelength conversion in scaled Silicon waveguides
Varun RaghunathanDimitris DimitropoulosRicardo ClapsBahram Jalali
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2004 Volume 1 Issue 11 Pages 298-304

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Abstract

Parametric Raman nonlinearities in Silicon waveguides is used to demonstrate wavelength conversion from Stokes to anti-Stokes channels. The effects of two photon absorption and free carrier nonlinear losses on the conversion process have also been analyzed. We find that scaling down the waveguide dimensions to submicron sizes is advantageous in terms of increasing the Raman nonlinearities and reducing the carrier lifetime and hence nonlinear absorption.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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