IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Drain current response delay of FD-SOI MOSFETs in RF operation
Yoshiyuki ShimizuGue Chol KimBunsei MurakamiKeisuke UedaYoshihiro UtsurogiSungwoo ChaToshimasa MatsuokaKenji Taniguchi
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2004 Volume 1 Issue 16 Pages 518-522

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Abstract

We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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