Drain current response delay of FD-SOI MOSFETs in RF operation

Yoshiyuki Shimizu; Gue Chol Kim; Bunsei Murakami; Keisuke Ueda; Yoshihiro Utsurogi; Sungwoo Cha; Toshimasa Matsuoka; Kenji Taniguchi

doi:10.1587/elex.1.518

LETTER

Drain current response delay of FD-SOI MOSFETs in RF operation

Yoshiyuki Shimizu, Gue Chol Kim, Bunsei Murakami, Keisuke Ueda, Yoshihiro Utsurogi, Sungwoo Cha, Toshimasa Matsuoka, Kenji Taniguchi

著者情報

キーワード: FD-SOI, MOSFET, RF, modeling, drain current response delay

ジャーナルフリー

2004 年 1 巻 16 号 p. 518-522

DOI https://doi.org/10.1587/elex.1.518

詳細

抄録

We investigated the frequency dependences of Y₂₂ of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.

責任著者(Corresponding author)

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