IEICE Electronics Express
Online ISSN : 1349-2543
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A high-sensitive digital photosensor using MOS interface-trap charge pumping
Akihiro UeharaKeiichiro KagawaTakashi TokudaJun OhtaMasahiro Nunoshita
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2004 Volume 1 Issue 18 Pages 556-561

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Abstract

A high-sensitive CMOS photosensor based on a pulse frequency modulation (PFM) scheme is presented. We propose and demonstrate the high-sensitive PFM photosensor, whose output frequency is proportionate to the incident light intensity, that utilizes MOS interface-trap charge pumping (ITCP) as a frequency-controlled ultra-low current. The proposed pixel sensor consists of only 4 transistors: a transistor as an ultra-low current source; a sense amplifier transistor; a selection transistor; and, a reset transistor. The prototype device is fabricated using 0.6-µm standard CMOS technology. High sensitivity 4.0 × 105Hz/(W·m-2), which is larger than two orders of magnitude compared to previous works, was obtained.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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