IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors
Hideaki MatsuzakiKimikazu SanoTakatomo Enoki
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2004 Volume 1 Issue 2 Pages 24-28

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Abstract

An SCFL (source coupled FET logic) -based ring oscillator was fabricated with pseudomorphic InGaAs channel high electron mobility transistors (HEMTs) with an extrinsic transconductance of 1.96S/mm. A low power consumption of 26.9mW/gate was obtained for the SCFL inverter along with a propagation delay time of 5.08ps/gate. Low-power operation without sacrificing the propagation delay time is possible because of the low knee voltage of less than 0.3V and the high threshold voltage of near zero volts of a HEMT. These results demonstrate the possibility of the large-scale integration of HEMTs using low-power and high-speed circuit configurations.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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