2004 Volume 1 Issue 2 Pages 24-28
An SCFL (source coupled FET logic) -based ring oscillator was fabricated with pseudomorphic InGaAs channel high electron mobility transistors (HEMTs) with an extrinsic transconductance of 1.96S/mm. A low power consumption of 26.9mW/gate was obtained for the SCFL inverter along with a propagation delay time of 5.08ps/gate. Low-power operation without sacrificing the propagation delay time is possible because of the low knee voltage of less than 0.3V and the high threshold voltage of near zero volts of a HEMT. These results demonstrate the possibility of the large-scale integration of HEMTs using low-power and high-speed circuit configurations.