IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Atomic configuration of boron pile-up at the Si/SiO2 interface
Masayuki FuruhashiTetsuya HiroseHiroshi TsujiMasayuki TachiKenji Taniguchi
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2004 Volume 1 Issue 6 Pages 126-130

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Abstract

The thermo dynamical stability of a boron atom at the Si/SiO2 interface was studied by using ab initio calculation to investigate a mechanism of boron pile-up at the interface during thermal annealing. The B atom is stable in bulk Si site of the interface without any interface defect, which contradicts the experimental observations. By introducing an oxygen vacancy at the interface, the mechanism of B segregation into SiO2 layer at the atomic scale was verified.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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