Atomic configuration of boron pile-up at the Si/SiO2 interface

Masayuki Furuhashi; Tetsuya Hirose; Hiroshi Tsuji; Masayuki Tachi; Kenji Taniguchi

doi:10.1587/elex.1.126

LETTER

Atomic configuration of boron pile-up at the Si/SiO₂ interface

Masayuki Furuhashi, Tetsuya Hirose, Hiroshi Tsuji, Masayuki Tachi, Kenji Taniguchi

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Keywords: boron, pile-up, Si/SiO₂ interface, ab initio calculation

JOURNAL FREE ACCESS

2004 Volume 1 Issue 6 Pages 126-130

DOI https://doi.org/10.1587/elex.1.126

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Abstract

The thermo dynamical stability of a boron atom at the Si/SiO₂ interface was studied by using ab initio calculation to investigate a mechanism of boron pile-up at the interface during thermal annealing. The B atom is stable in bulk Si site of the interface without any interface defect, which contradicts the experimental observations. By introducing an oxygen vacancy at the interface, the mechanism of B segregation into SiO₂ layer at the atomic scale was verified.

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