IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
1.3-µm InGaAlAs-BH laser with Cl2/N2 ECR plasma etched mesas
Hiroyuki UchiyamaHiroshi SatoKazunori ShinodaAkira TaikeTakafumi TaniguchiShinji Tsuji
Author information
Keywords: InGaAlAs, laser, Cl2, N2, ECR, dry etching
JOURNALS FREE ACCESS

2004 Volume 1 Issue 7 Pages 193-197

Details
Abstract

We developed a dry etching process suitable for fabricating InGaAlAs laser mesa stripes. We used optimized Cl2/N2 ECR plasma for etching an InGaAlAs laser multilayer structure. This Cl2/N2 ECR plasma led to a uniform etching rate and an anisotropic profile using a nitrified side-protection mechanism. This smooth and anisotropic dry etching produced a well-matched interface for semi-insulated Fe-InP regrowth. It also enabled successfully fabricating an InGaAlAs buried heterostructure laser. The laser showed stable operation at 85°C and long-term reliability over 5000 hrs.

Information related to the author
© 2004 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
feedback
Top