IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
RF CMOS inductor shielded by a high-impedance surface
Eiichi SanoKoji InafuneMasamichi Akazawa
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2004 Volume 1 Issue 8 Pages 233-236

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Abstract

We propose a high-performance inductor based on the concept of a high-impedance surface (or artificial magnetic conductor). The inductor is shielded from the silicon substrate by a high-impedance surface consisting of a lumped capacitor and inductor. Theoretical calculations comparing the proposed inductor with a conventional inductor shielded by an ordinary metal surface show that the resonant frequency and quality factor (Q) in the millimeter-wave region are higher for the proposed inductor.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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