A compact quadrature coupler on GaAs IPD process for LTE applications

Abstract

A compact quadrature coupler — using intertwined mutual inductors by the proposed GaAs integrated passive device (IPD) process — is developed by considering the quality factor of inductor and minimum insertion loss for the long term evolution (LTE) applications. At the center frequency of LTE bands 5 and 8, the quadrature coupler achieved −3.45dB of insertion loss S₂₁ and −3.43dB of coupling S₄₁ with less than 0.65 degrees of phase error over the frequency range. The reflection coefficient S₁₁ and the isolation S₃₁ are −24.32dB and −23.45dB, respectively. This coupler can be usable for a compact quadrature 3-dB divider/combiner as partial component of a balanced power amplifier.