2013 Volume 10 Issue 6 Pages 20130039
This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites allowance compared with conventional method.