IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Page overwriting method for performance improvement of NAND flash memories
Samkyu WonEui-Young ChungDuckju KimJunseop ChungBongseok HanHyukjun Lee
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2013 Volume 10 Issue 6 Pages 20130039

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Abstract

This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites allowance compared with conventional method.

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© 2013 by The Institute of Electronics, Information and Communication Engineers
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