IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Page overwriting method for performance improvement of NAND flash memories
Samkyu Won, Eui-Young Chung, Duckju Kim, Junseop Chung, Bongseok Han, Hyukjun Lee
Author information
Keywords: NAND flash memory, single level cell, multi-level cell, overwrite, write performance
JOURNAL FREE ACCESS

2013 Volume 10 Issue 6 Pages 20130039

Details
Download PDF (422K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites allowance compared with conventional method.
Content from these authors
© 2013 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article
Favorites & Alerts

Recently viewed articles
Share this page
feedback
 Top