IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
Experimental demonstration of a ferroelectric FET using paper substrate
Changhwan ShinGwang-Geun LeeDae-Hee HanSeung-Pil HanEisuke TokumitsuShun-Ichiro OhmiDong-Joo KimHiroshi IshiwaraMinseo ParkSeung-Hyun KimWan-Gyu LeeYun Jeong HwangByung-Eun Park
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2014 年 11 巻 14 号 p. 20140447

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A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ∼20 V for the transistor on paper. An on/off current ratio of ∼102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).
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© 2014 by The Institute of Electronics, Information and Communication Engineers
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