IEICE Electronics Express
Online ISSN : 1349-2543
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InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform
Yongpeng ChengYuki IkkuMitsuru TakenakaShinichi Takagi
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2014 Volume 11 Issue 16 Pages 20140609

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Abstract

An InGaAs metal-semiconductor-metal (MSM) photodetector (PD) monolithically integrated with an InP photonic-wire waveguide has been demonstrated by using III-V CMOS photonics platform. Owing to a Schottky contact between Ni and p-InGaAs, the MSM PD operation is obtained with a dark current of 270 nA at 1 V bias voltage. The 20-µm-long waveguide InGaAs PD exhibits responsivity of around 0.4 A/W and broadband operation covering the C- and L-bands, enabling wavelength division multiplexing (WDM) optical interconnects.

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© 2014 by The Institute of Electronics, Information and Communication Engineers
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