Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Noriaki Sato
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Nobuhiko Nishiyama
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Shigehisa Arai
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
Published: 2014 Received: July 16, 2014Released on J-STAGE: September 25, 2014Accepted: August 04, 2014
Advance online publication: August 25, 2014
Revised: -
The spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser were studied under various collector–base voltages and emitter currents. The result shows that the peak wavelength shifts as a function of the output power resulting from voltage and current controls exhibited contrasting behavior under a continuous-wave operation.
