Study of charge retention mechanism for DNA memory FET

抄録

The charge retention mechanism of the λ-DNA molecules with 400bp (136nm) are examined. The DNA solution was dropped on the Si source and drain electrodes with the gap of 120nm. The change of the refresh characteristics by applying the negative voltage to the gate was measured. As a result, it was found that the electron trap remarkably influenced on the hole conduction of the DNA channel. In addition, the DNA has memory ability because the trap and detrap of the electrons can be controlled by the refresh voltage.