2015 年 12 巻 1 号 p. 20141028
The first directly modulated InGaAsP DFB laser module using the flip-chip mounting technique was fabricated for 25.8-Gb/s operation. The fabricated laser chip has p- and n-electrodes on the surface side. This structure is suitable for flip-chip mounting, which provides a high modulation bandwidth. The fabricated module provided clear eye opening with a dynamic extinction ratio of over 4 dB when operated 25.8 Gb/s.