Abstract
A 65–77 GHz low power, meander-type transmission line CMOS low-noise amplifier for E-band millimetre-wave communication using 90 nm MS/RF CMOS process is demonstrated. The low-noise amplifier consists of multi-stage cascaded common-source amplifiers with optimized noise figure, power gain, and power consumption. The LNA achieves 11.7 dB power gain, 5.5 dB noise figure, and 17.7 mW power consumption. The meander-type transmission line circuit design is adopted to reduce chip area; the total transmission line area in LNA is only 0.024 mm2.
