抄録
This paper discusses impacts of flexible Vth control, low process variability, and steep SS with small on-current of new structure devices on ultra-low voltage circuits. Our simulation results based on PTM 22 nm model clarify applicability of ultra-low voltage operation to a nominal speed common SoC designs by an introduction of Vth control as well as low power sensor nodes. We also reveal requirement of process variability suppression for high energy efficiency with steep SS transistors, and utilization of small on-current steep SS transistors to low power and low speed applications. Our qualitative discussion well explains these experiment results.
