AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

抄録

We report on AlGaN channel metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for the first time. The insulator of 10-nm SiN_x was deposited by plasma enhanced chemical vapor deposition, which induced a low reverse and forward Schottky leakage. A very high breakdown electric field of 1.8 MV/cm was reached with a gate-drain distance of 2 µm. The breakdown voltage increased non-linearly with the gate-drain distance and reached 1661 V with a gate-drain distance of 20 µm. As temperature increases from 25 to 275°C, the saturation drain current decreases slightly by 20% from 211 to 169 mA/mm and the on-resistance increases only by 24%.