Conducted noise of GaN Schottky barrier diode in a DC–DC converter

Takaaki Ibuchi; Tsuyoshi Funaki; Shinji Ujita; Masahiro Ishida; Tetsuzo Ueda

doi:10.1587/elex.12.20150912

LETTER

Conducted noise of GaN Schottky barrier diode in a DC–DC converter

Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda

著者情報

キーワード: gallium nitride Schottky barrier diode, silicon carbide Schottky barrier diode, reverse recovery, DC–DC converter, conducted noise

ジャーナルフリー

2015 年 12 巻 24 号 p. 20150912

DOI https://doi.org/10.1587/elex.12.20150912

Browse “Advance online publication” version

詳細

抄録

Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) offer superior electrical performance over conventional silicon (Si) devices for high-voltage applications. Their fast switching operation and low switching losses help increase the efficiency of power conversion circuit. This study focuses on the switching characteristics of a GaN Schottky barrier diode (SBD) and investigates the conducted noise characteristics in a DC–DC boost converter by comparing a Si PiN diode and a SiC SBD.

責任著者(Corresponding author)

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