IEICE Electronics Express
Online ISSN : 1349-2543
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Optical gating width variability using electrode parasitic capacitance
Atsushi YamadaYasuaki NagashimaShinichi OnukiYoshiharu ShimoseAkihito OtaniKenji Kawano
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2016 Volume 13 Issue 11 Pages 20160363

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Abstract

We developed an optical gating device using a bulk layer and high mesa ridge/BH hybrid structure with input power of 14.5 dBm for optical communication performance monitoring. The shortest gating width of 3.9 ps was obtained in all-optical sampling experiments. However, gated waveform distortion occurred due to superfluous carriers in absorption layer in case of low bias voltage and optical pumping power condition. We have successfully improved waveform quality by extension electric parasitic capacitance to draw out it, thus variable gating width depending on transmission speed has been realized.

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© 2016 by The Institute of Electronics, Information and Communication Engineers
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