2-µm wavelength tunable distributed Bragg reflector laser

Takuya Kanai; Naoki Fujiwara; Yoshitaka Ohiso; Hiroyuki Ishii; Makoto Shimokozono; Mikitaka Itoh

doi:10.1587/elex.13.20160655

LETTER

2-µm wavelength tunable distributed Bragg reflector laser

Takuya Kanai, Naoki Fujiwara, Yoshitaka Ohiso, Hiroyuki Ishii, Makoto Shimokozono, Mikitaka Itoh

著者情報

キーワード: semiconductor laser, tunable laser, gas sensing

ジャーナルフリー

2016 年 13 巻 16 号 p. 20160655

DOI https://doi.org/10.1587/elex.13.20160655

Browse “Advance online publication” version

詳細

抄録

We demonstrate a tunable distributed Bragg reflector (DBR) laser diode operating in the 2-µm region. A strained InGaAs multi-quantum well is used for the active region, and InGaAs is used for the passive region in the 2-µm DBR laser. The fabricated DBR laser emits a single-mode continuous wave at 2.02 µm, and the output power exceeds 6 mW at room temperature. A wavelength tuning range of about 10 nm is achieved by controlling of injection currents to the DBR regions.

責任著者(Corresponding author)

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