IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
A 128 Kb HfO2 ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement
Chengying ChenHongbin SunHaihua ShenFeng Zhang
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2016 Volume 13 Issue 6 Pages 20160061

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Abstract

A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13 µm 1P8M CMOS process. ReRAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.

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© 2016 by The Institute of Electronics, Information and Communication Engineers
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