IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
A CMOS digital step X-type attenuator with low process variations
Jiayue WanZhiming ChenXinghua Wang
Author information
JOURNALS FREE ACCESS

Volume 14 (2017) Issue 17 Pages 20170761

Details
Download PDF (2776K) Contact us
Abstract

In this paper, a digital step X-type attenuator with low process variations is demonstrated using 90 nm CMOS technology. The X-type attenuator uses MOSFETs as voltage controlled resistors, which influenced by process parameters. And a compensation circuit associated with the threshold voltage is employed to mitigate the process influence. The attenuator have a maximum attenuation range of 32 dB with 0.5 dB steps. The rms amplitude error and rms phase error are 0.42 dB and 3.1° over 23.5–30 GHz respectively, and the insertion losse is 9.77 dB at 25 GHz. The core chip size is 0.48 mm2.

Information related to the author
© 2017 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article

Recently visited articles
feedback
Top