IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide
Younghwan SonYoon KimMyounggon Kang
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2017 Volume 14 Issue 8 Pages 20170141

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Abstract

In this paper, the simple multi-frequency charge pumping (CP) technique in conjunction with the tunneling model of trapped charges shows for profiling of the near-interface oxide traps in gate metal/high-k dielectric/SiO2 interfacial layer stack structure. The methodological basis and the accurate model are introduced for analysis of measured multi-frequency CP data in dual-layer gate oxide. The whole models are derived from the fundamental physics and simplified method is introduced for extraction of the trap profile in the stacked gate dielectric from multi-frequency CP curves.

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© 2017 by The Institute of Electronics, Information and Communication Engineers
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