2017 Volume 14 Issue 8 Pages 20170191
This paper presents a high gain, medium power amplifier for D band application based on 0.5 µm composite collector InP double heterojunction bipolar transistor (DHBT) process. The power amplifier has four ways that combined with a T-junction power combiner. And each way has four stages HBT to provide a high gain performance. The measurement results demonstrate a peak gain of 23.6 dB at 75 GHz and at 140 GHz the gain is 21.89 dB. The saturation output power is 13.7 dBm at 140 GHz with DC power consumption 250 mW.